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this is information on a product in full production. september 2014 docid026910 rev 1 1/16 STH185N10F3-2 automotive-grade n-channel 100 v, 180 a, 3.9 m typ., stripfet? f3 power mosfet in a h 2 pak-2 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? ultra low on-resistance ? 100% avalanche tested applications ? switching applications description this device is an n-channel power mosfet produced using stripfet? f3 technology. it is designed to minimize on-resistance and gate charge to provide superior switching performance. h 2 pak-2 1 2 tab 3 $0y '7$% * 6 order code v ds r ds(on) max. i d STH185N10F3-2 100 v 4.5 m ? 180 a table 1. device summary order code marking packages packaging STH185N10F3-2 185n10f3 h 2 pak-2 tape and reel www.st.com
contents STH185N10F3-2 2/16 docid026910 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid026910 rev 1 3/16 STH185N10F3-2 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 180 a i d (1) drain current (continuous) at t c =100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25c 315 w derating factor 2.1 w/c dv/dt peak diode recovery voltage slope 20 v/ns e as (3) 3. starting tj = 25 c, i d = 80 a, v dd = 50 v. single pulse avalanche energy 350 mj t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.48 c/w r thj-pcb (1) 1. when mounted on fr-4 board, on 1inch2, 2oz cu. thermal resistance junction-pcb max 35 c/w
electrical characteristics STH185N10F3-2 4/16 docid026910 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 100 v i dss zero gate voltage drain current v gs = 0, v ds = 100 v, 10 a v gs = 0, v ds = 100 v, t c =125c 100 a i gss gate body leakage current v ds = 0, v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 3.9 4.5 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f = 1 mhz -6665- pf c oss output capacitance - 786 - pf c rss reverse transfer capacitance -49-pf q g total gate charge v dd = 50 v, i d = 120 a, v gs = 10 v (see figure 14 ) - 114.6 - nc q gs gate-source charge - 38.8 - nc q gd gate-drain charge - 31.9 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 60 a r g =4.7 v gs = 10 v (see figure 13 , figure 18 ) - 25.6 - ns t r rise time - 97.1 - ns t d(off) turn-off delay time - 99.9 - ns t f fall time - 6.9 - ns
docid026910 rev 1 5/16 STH185N10F3-2 electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 180 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) -720a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage v gs =0, i sd =120 a - 1.5 v t rr reverse recovery time i sd =120 a, di/dt = 100 a/s, v dd =80 v, tj=150c (see figure 15 ) - 83.4 ns q rr reverse recovery charge - 295.7 nc i rrm reverse recovery current - 7.1 a
electrical characteristics STH185N10F3-2 6/16 docid026910 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv ?v pv 7m ?& 7f ?& 6lqjohsxovh *,3*6$ 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp single pulse =0.5 280tok i d 200 150 50 0 0 2 v ds (v) 4 (a) 1 3 5 250 300 5v 6v 7v v gs =10v 678 100 350 am08616v1 i d 200 150 50 0 0 4 v gs (v) 8 (a) 2 6 9 250 300 1 3 5 7 v ds =2v 100 350 am08617v1 v (br)dss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 175 i d =1ma am08618v1 r ds(on) 3.7 3.5 040 i d (a) (m ) 20 60 3.9 4.1 v gs =10v 100 80 120 4.3 140 160 180 am08626v1
docid026910 rev 1 7/16 STH185N10F3-2 electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 20 q g (nc) (v) 80 8 40 60 10 v dd =50v i d =120a 100 12 120 140 am08620v1 c 15000 10000 5000 0 0 40 v ds (v) (pf) 20 20000 60 ciss coss crss 80 100 am08621v1 v gs(th) 0.9 0.7 0.5 0.3 -75 t j (c) (norm) -25 1.1 75 25 125 175 1.3 i d =250a am08622v1 r ds(on) 1.1 0.9 0.7 0.5 -75 t j (c) (norm) -25 75 25 125 175 1.3 1.5 1.7 1.9 2.1 i d =60a v gs =10v am08623v1 v sd 0 40 i sd (a) (v) 20 100 60 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =-55c t j =175c t j =25c 120 am08624v1
test circuits STH185N10F3-2 8/16 docid026910 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026910 rev 1 9/16 STH185N10F3-2 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STH185N10F3-2 10/16 docid026910 rev 1 figure 19. h2pak-2 drawing 8159712_c
docid026910 rev 1 11/16 STH185N10F3-2 package mechanical data 16 table 8. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
package mechanical data STH185N10F3-2 12/16 docid026910 rev 1 figure 20. h2pak-2 recommended footprint (dimensions are in mm) 8159712_c
docid026910 rev 1 13/16 STH185N10F3-2 packaging mechanical data 16 5 packaging mechanical data figure 21. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2
packaging mechanical data STH185N10F3-2 14/16 docid026910 rev 1 figure 22. reel table 9. h2pak 2 leads tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid026910 rev 1 15/16 STH185N10F3-2 revision history 16 6 revision history table 10. document revision history date revision changes 23-sep-2014 1 first version.
STH185N10F3-2 16/16 docid026910 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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